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  Datasheet File OCR Text:
 Built-in Damper Diode
sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5003 1500 800 6 7(Pulse14) 3.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
2SC5003
(Ta=25C) 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit A mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
0.80.2 15.60.2 23.00.3 9.50.2
Equivalent circuit
B
C
( 50 )
E
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics
Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
5.50.2 3.45 0.2 5.5 o3.30.2 1.6
V V V MHz pF
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 tstg (s) 4.0max tf (s) 0.2max
3.35
1.5
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V) 7
1.7 A
VCE(sat)-IC Characteristics (Typical)
3 (I C: I B= 5 :1)
I C - V BE Temperature Characteristics (Typical)
7 (VCE=5V)
1. 4A
6
900 mA
6
Collector Current I C (A)
5
600 mA
2
Collector Current I C( A)
4
4
mp)
mp)
1
0
0
1
2
3
4
0
0.2
0.5
1
5
10
0
0
0.5
-30C
I B= 100mA
125C
2
2
25C (C
(Case
1
(Cas
ase Te
3
300mA
Temp)
e Te
1.0
3.0
1.5
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
h FE - IC Characteristics (Typical)
(VCE=5V) 50 20
tstg*t f - IC Characteristics (Typical)
j - a( C /W )
. VCC=200V . IC : IB1: -IB2 =5 :1: 2 tstg 3
j-a - t Characteristics
t st g*t f ( s)
10 5
DC Cur rent Gain h F E
12
5C
Transient Thermal Resistance
1
10
25
C
0C
Switching T im e
-3
1 0.5
tf
0.5
5
2 0.02
0.05
0.1
0.5
1
5
7
0.1 0.2
0.5
1
5
7
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20
100s
Reverse Bias Safe Operating Area
20 80
P c - T a Derating
10 Co lle ctor Cu rre nt I C( A) Co lle ctor Cu rre nt I C( A)
M aximu m Power Dissipa tion P C( W)
10 5
60
W ith In fin ite he
5
40
at si
1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
nk
Without Heatsink Natural Cooling
0.5
20
1 100
500 Collector-Emi tter Voltage V C E( V)
1000
0.1 50
100
500
1000
2000
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
123


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